CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C848I3
Issued Date : 2003.04.18
Revised Date : 2004.06.30
Page No. : 1/4
BTD1864I3
Features
•
Low V
CE
(sat)
•
Excellent current gain characteristics
•
Complementary to BTB1243I3
Symbol
BTD1864I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B
B CCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note :
*1.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
80
80
50
6
5
7.5
1
15
150
-55~+150
Unit
V
V
V
V
*1
A
W
°C
°C
BTD1864I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
