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BTD1805J3 参数 Datasheet PDF下载

BTD1805J3图片预览
型号: BTD1805J3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT NPN外延平面晶体管 [Low Vcesat NPN Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 164 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTD1805J3的Datasheet PDF文件第1页浏览型号BTD1805J3的Datasheet PDF文件第2页浏览型号BTD1805J3的Datasheet PDF文件第4页  
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
1000
Spec. No. : C820J3
Issued Date : 2004.12.19
Revised Date :2005.07.26
Page No. : 3/ 4
Saturation Voltage vs Collector Current
VCE=2V
Saturation Voltage---(mV)
Current Gain---HFE
100
VCESAT@IC=40IB
VCE=1V
VCESAT@IC=20IB
100
1
10
100
1000
10000
Collector Current---IC(mA)
10
1
10
100
1000
10000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
1000
On Voltage vs Collector Current
Saturation Voltage---(mV)
VBESAT@IC=20IB
On Voltage---(mV)
VBEON@VCE=1V
100
1
10
100
1000
10000
Collector Current---IC(mA)
100
1
10
100
1000
10000
Collector Current---IC(mA)
Power Derating Curve
1.2
Power Derating Curve
16
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃)
Power Dissipation---PD(W)
14
12
10
8
6
4
2
0
0
50
100
150
200
Case Temeprature---TC(℃)
BTD1805J3
CYStek Product Specification