CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C214L3
Issued Date : 2005.01.20
Revised Date :
Page No. : 1/4
BTD1383L3
Description
•
The BTD1383L3 is a darlington amplifier transistor.
Symbol
BTD1383L3
B
C
Outline
SOT-223
C
E
B：Base
C：Collector
E：Emitter
C
E
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @T
A
=25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limits
40
32
10
0.3
1.5
(Note 1)
1.5
(Note 2)
83.3
(Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
°C/W
°C
°C
Note : 1.Single pulse test, P
W
=10ms
2 .Device mounted on a glass epoxy printed circuit board 1.575 in
×
1.575 in
×
0.059 in : mounting pad for the collector
lead min 0.93 in².
BTD1383L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
