Spec. No. : C212WC3
Issued Date : 2003.08.15
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Electrical Characteristics
• Characterization Information (Ta=25°C)
Parameters
Conditions
VCB =3V, IE=0
Symbol Min Typ. Max Unit
Collector Cutoff Current
ICBO
-
-
1
µA
µA
-
Emitter Cutoff Current
VEB =1V
IEBO
-
-
1
VCE =2V, IC =1mA
hFE(1)
hFE(2)
52
52
-
-
270
DC Current Gain
Cutoff Frequency
Minimum Noise Figure
Associated Gain
Insertion Gain |S21|2
In 50 Ohm system
Output Capacitance
VCE =6V, IC =7mA
-
-
-
VCE =1V, IC =10mA
7.6
9
-
GHz
GHz
dB
dB
dB
dB
dB
dB
pF
fT
VCE =3V, IC =12mA
-
-
VCE =2V, IC =4.2mA, f =0.9GHz
VCE =5V, IC =4.5mA, f =0.9GHz
VCE =2V, IC =4.2mA, f =0.9GHz
VCE =5V, IC =4.5mA, f =0.9GHz
VCE =2V, IC =4.2mA, f =0.9GHz
VCE =5V, IC =4.5mA, f =0.9GHz
VCB =10V, IE=0, f = 0.9GHz
-
1.4
1.6
12
13.5
12.8
13.5
0.7
-
NFmin
GA
-
-
-
-
-
-
-
-
|S21|2
Cob
-
-
-
1.0
Classification Of hFE(1)
Rank
Range
K
P
Q
52~120
82~180
120~270
S-Parameters
• VC=2V, IC=4.2mA, IB=60µA
FREQ.
S11
S21
S12
Ang
S22
(GHz)
Mag
Ang
Mag
Ang
133.59
123.62
114.96
107.71
101.24
95.56
90.53
85.55
81.44
77.18
73.05
69.95
65.80
62.11
59.78
55.42
52.89
Mag
Mag
Ang
0.3
0.604
0.524
0.454
0.399
0.355
0.320
0.291
0.268
0.249
0.237
0.225
0.221
0.218
0.216
0.220
0.223
0.229
-54.55
-68.94
-81.62
-92.38
7.842
7.093
6.422
5.768
5.226
4.756
4.367
4.011
3.717
3.490
3.229
3.049
2.880
2.708
2.568
2.465
2.311
0.067
0.077
0.084
0.090
0.096
0.101
0.107
0.113
0.118
0.125
0.131
0.137
0.144
0.151
0.158
0.167
0.173
51.54
48.20
46.25
45.71
45.45
45.48
46.55
46.59
47.32
48.06
48.45
48.55
49.30
49.54
49.59
49.92
49.56
0.669
0.583
0.518
0.468
0.431
0.400
0.380
0.364
0.348
0.339
0.330
0.324
0.318
0.314
0.309
0.310
0.305
-35.46
-39.37
-41.88
-43.32
-44.21
-44.69
-44.62
-45.20
-45.38
-45.42
-46.12
-46.58
-47.16
-48.21
-48.87
-49.95
-51.14
0.4
0.5
0.6
0.7
-102.51
-111.90
-121.04
-129.71
-138.30
-147.20
-155.29
-163.42
-171.96
-179.45
173.74
166.14
160.61
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
BTC5096WC3
CYStek Product Specification