CYStech Electronics Corp.
0.9
1.2
1.5
1.8
2.1
2.4
2.7
2.8
1.21
1.42
1.63
1.84
2.04
2.25
2.46
2.53
0.282
0.239
0.246
0.276
0.303
0.301
0.242
0.206
48.2
68.6
90.8
114.6
139.6
165.5
-167.8
-158.8
0.29
0.27
0.24
0.21
0.16
0.14
0.17
0.19
13.05
10.97
9.34
8.08
7.10
6.33
5.68
5.48
1.42
1.57
1.79
2.04
2.30
2.50
2.62
2.65
Spec. No. : C212S3
Issued Date : 2003.08.15
Revised Date :
Page No. : 4/8
2.01
1.82
1.79
2.45
1.87
2.50
2.71
2.91
12.80
10.86
9.19
7.84
6.69
5.64
4.78
4.50
•
Smoothed noise data (V
C
=5V, I
C
=4.5mA, I
B
=60µA)
FREQ.
(GHz)
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
2.8
FMIN
(dB)
0.87
1.08
1.28
1.49
1.70
1.91
2.12
2.33
2.54
2.61
GAMMA OPT
Mag
Ang
0.631
12.4
0.411
26.3
0.288
42.5
0.237
61.0
0.233
81.7
0.251
104.9
0.267
130.5
0.256
158.5
0.193
-170.9
0.157
-160.1
Rn
(To 50)
0.49
0.38
0.32
0.29
0.27
0.23
0.19
0.16
0.19
0.22
Ga
(dB)
19.43
16.36
13.85
11.84
10.24
9.00
8.03
7.27
6.64
6.45
F50-S
(dB)
1.80
1.51
1.51
1.65
1.85
2.09
2.32
2.51
2.64
2.68
F50-M
(dB)
2.40
1.84
2.38
1.88
1.88
2.50
1.81
2.61
2.63
2.92
G50
(dB)
18.39
15.83
13.47
11.54
9.89
8.55
7.40
6.35
5.50
5.20
HSPICE 2G.6 Model
•
NPN BJT Parameters
IS=1.444E-16 (A)
BF=85.9
NF=1.0
VAF=45.9 (V)
IKF=160.3E-3 (A)
ISE=2.0E-18 (A)
NE=2.0
BR=18.54
NR=1.01
VAR=6.299
IKR=10.0E-3
ISC=1.21E-16
NC=1.01
RB=4.30 (Ohm)
IRB=20.0E-3 (A)
RBM=2.78 (Ohm)
RE=1.011 (Ohm)
RC=16.69 (Ohm)
CJE=6.04E-13 (F)
VJE=1.003 (V)
MJE=0.3882
TF=1.22E-11 (Sec)
XTF=1.70
VTF=0.69 (V)
ITF=0.1 (A)
PTF=10.0 (deg)
CJC=2.38E-13 (F)
VJC=0.7 (V)
MJC=0.4474
XCJC=0.3
XTI=3.0
FC=0.9
BV=0.0 (V)
IBV=1.0E-3 (A)
TR=1.0E-9 (Sec)
CJS=2.43E-13 (F)
VJS=0.5734 (V)
MJS=0.3798
XTB=0.0
EG=1.11 (eV)
XTI=3.0
FC=0.9
TNOM=25 (°C)
•
B’-E’ DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
RS=10.0 (Ohm)
VJ=1.003 (V)
N=1.0
M=0.3882
TT=0.0 (Sec)
EG=1.11 (eV)
•
C’-S’ DIODE Parameters
IS=1.0E-22 (A)
CJO=1.0E-15 (F)
RS=0.0 (Ohm)
VJ=0.5734 (V)
N=1.0
M=0.3798
BTC5095S3
KF=0.0
AF=1.0
TNOM=25 (°C)
XTI=3.0
FC=0.5
BV=0.0 (V)
KF=0.0
AF=1.0
TNOM=27 (°C)
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
