CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210D3
Issued Date : 2004.09.01
Revised Date : 2005.04.20
Page No. : 1/4
BTC4620D3
Features
•
High breakdown voltage. (BV
CEO
=350V)
•
Low saturation voltage, typically V
CE
(sat) =0.1V at I
C
/I
B=
10mA/1mA.
•
Complementary to BTA1776D3
•
Pb-free package
Symbol
BTC4620D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
EC B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (T
A
=25℃)
Power Dissipation (T
C
=25℃)
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
Tj
Tstg
Limit
350
350
5
100
200
1.2
7
150
-55~+150
Unit
V
V
V
mA
W
°C
°C
BTC4620D3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
