CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C210A3-R
Issued Date : 2003.10.15
Revised Date :2004.04.02
Page No. : 1/4
BTC4505A3
Features
•
High breakdown voltage. (BV
CEO
= 400V)
•
Low saturation voltage, typically V
CE
(sat) = 0.1V at I
C
/ I
B=
10mA / 1mA.
•
Complementary to BTA1759A3
Symbol
BTC4505A3
Outline
TO-92
B:Base
C:Collector
E:Emitter
EBC
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Tj
Tstg
Limit
400
400
6
300
625
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
BTC4505A3
CYStek Product Specification