Spec. No. : C625K3
Issued Date : 2014.04.17
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Base Current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
IC
ICP
IB
200
160
6
1
3
A
0.5
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature and Storage Range
PD
900
139
-55~+150
mW
RθJA
Tj ; Tstg
°C/W
°C
Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%.
Characteristics
(Ta=25°C)
Symbol
Min.
200
160
6
-
-
-
-
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
270
210
7.4
15
-
-
-
V
V
V
nA
nA
mV
Ω
V
V
-
MHz
pF
IC=100μA
IC=10mA
IE=100μA
VCB=200V
VEB=6V
100
100
500
1
1.2
0.75
320
-
IEBO
2
VCE(sat)
RCE(sat)
VBE(sat)
VBE(on)
hFE
*
*
*
*
*
200
0.4
0.9
0.62
-
IC=500mA, IB=50mA
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=5V, IC=5mA
VCE=5V, IC=100mA
VCE=10V, IC=50mA
VCB=10V, IE=0A,f=1MHz
-
0.45
160
100
-
fT
Cob
180
6.2
20
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTC2383K3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
