CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C316
Issued Date : 2005.12.21
Revised Date : 2006.04.03
Page No. : 1/9
BTC2030A3
Features
•
High breakdown voltage, BV
CEO
≥
200V
•
Large continuous collector current capability
•
Low collector saturation voltage
•
Pb-free package
Symbol
BTC2030A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
Pd
Tj
Tstg
Limits
280
200
6
1
0.5
900
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTC2030A3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
