CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
Spec. No. : C652F3
Issued Date : 2004.09.07
Revised Date :
Page No. : 1/4
BTC1510F3
Description
The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
•High
BV
CEO
•Low
V
CE(SAT)
•High
current gain
•Monolithic
construction with built-in base-emitter shunt resistors
Features:
Equivalent Circuit
BTC1510F3
C
B
R1 8k
R2 120
Outline
TO-263
B:Base
C:Collector
E:Emitter
E
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
150
150
5
10
15
2
60
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTC1510F3
CYStek Product Specification