CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817A3-R
Issued Date : 2003.05.31
Revised Date:2006.05.15
Page:1/4
BTB772SA3
Features
•
Low V
CE
(sat),typically -0.3 V at I
C
/ I
B
= -2A / -0.1A
•
Excellent current gain characteristics
•
Complementary to BTD882SA3
•
Pb-free package
Symbol
BTB772SA3
Outline
TO-92
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350
μ
s, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(pulse)
Pd
Tj
Tstg
Limit
-50
-50
-5
-3
-7
(Note)
750
150
-55~+150
Unit
V
V
V
A
A
mW
°C
°C
BTB772SA3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
