CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
BTB772T3/S
Features
•
Low V
CE(sat)
, typically -0.3V at I
C
/ I
B
= -2A / -0.2A
•
Excellent current gain characteristics
•
Complementary to BTD882T3/S
•
Pb-free package is available
Equivalent Circuit
BTB772T3/S
Outline
TO-126
B：Base
C：Collector
E：Emitter
E C B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
Limit
-40
-30
-5
-3
-7
1
10
150
-55~+150
Unit
V
V
V
A
A
W
°C
°C
*1
Note : *1. Single Pulse Pw
≦
350µs, Duty
≦
2%
.
BTB772T3/S
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
