CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817M3-H
Issued Date : 2003.06.17
Revised Date:2005.08.19
Page:1/5
BTB772AM3
Features
•
Low V
CE
(sat), typically -0.3 V at I
C
/ I
B
= -2A / -0.2A
•
Excellent current gain characteristics
•
Complementary to BTD882AM3
Symbol
BTB772AM3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to
Ambient
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limit
-50
-50
-6
-3
-7
(Note 1)
600
1
(Note 2)
2
(Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
Unit
V
V
V
A
A
mW
W
W
°C/W
°C/W
°C/W
°C
°C
R
θJA
T
j
T
stg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When Mounted on a ceramic board with area measuring 40×40×1mm.
BTB772AM3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
