CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2006.08.28
Page No. : 1/5
BTB1580M3
Description
The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. Pb-free package process is adopted.
Equivalent Circuit
BTB1580M3
C
B
≒6K
≒
8k
Outline
SOT-89
≒
60
E
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Limits
-100
-100
-5
-4
-6
(Note 1)
0.6
1
(Note 2)
2
(Note 3)
208
125
(Note 2)
62.5
(Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
R
θJA
Tj
Tstg
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
BTB1580M3
CYStek Product Specification