BTB1580J3 参数 Datasheet PDF下载

CYStech Electronics Corp.

PNP Epitaxial Planar Transistor

Spec. No. : C655J3

Issued Date : 2008.07.25

Revised Date :2009.02.04

Page No. : 1/6

BTB1580J3

Description

BV

CEO

I

C

R

CESAT

-120V

-4A

600mΩ

The BTB1580J3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low

speed switching application. Pb-free package process is adopted.

Equivalent Circuit

BTB1580J3

C

B

≒6K

≒

8k

Outline

TO-252

≒

60

E

B：Base

C：Collector

E：Emitter

B

C

E

Absolute Maximum Ratings

(Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation(T

A

=25℃)

Power Dissipation(T

C

=25℃)

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

Storage Temperature

Note : Single Pulse Pw≦300μs, Duty≦2%.

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

Pd

R

θJA

R

θJC

Tj

Tstg

Limits

-120

-120

-5

-4

-6

1.5

20

83.3

6.25

150

-55~+150

Unit

V

V

V

A

A

W

W

°C/W

°C/W

°C

°C

BTB1580J3

CYStek Product Specification