CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2009.02.04
Page No. : 1/7
BTB1412J3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.5 V (max), at I
C
/ I
B
= -4A / -0.1A
•
Excellent DC current gain characteristics
•
Complementary to BTD2118J3
•
Pb-free package
BV
CEO
I
C
R
CESAT
-30V
-5A
75mΩ typ.
Symbol
BTB1412J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
B
C
E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-40
-30
-6
-5
-10
1
10
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTB1412J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
