CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817N3
Issued Date : 2003.06.17
Revised D
ate:2004.07.01
Page:1/4
BTB1424LN3
Features
•
Low V
CE(sat)
, typically -0.3 V at I
C
/ I
B
= -2A / -0.2A
•
Excellent current gain characteristics
•
Complementary to BTD2150LN3
Symbol
BTB1424LN3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
R
θJA
Tj
Tstg
Limit
-40
-30
-5
-3
-7
(Note)
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
BTB1424LN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
