CYStech Electronics Corp.
Low V
CE(sat)
PNP Epitaxial Planar Transistor
Spec. No. : C817L3
Issued Date : 2003.07.31
Revised Date :2004.12.15
Page No. : 1/3
BTB1424L3
Features
•
Excellent DC current gain characteristics
•
Low Saturation Voltage
V
CE
(sat)=-0.4V(typ) (I
C
=-2A, I
B
=-100mA).
•Complementary
to BTD2150L3
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)
(Note 1)
Power Dissipation @ T
C
=25℃
Junction Temperature
Storage Temperature
Note : Single pulse, Pw≤10ms, Duty Cycle≤30%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pd
Tj
Tstg
Limits
-50
-50
-6
-3
-5
(Note)
5
150
-55~+150
Unit
V
V
V
A
W
°C
°C
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
f
T
Cob
Min.
-50
-50
-6
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
240
35
Max.
-
-
-
-0.1
-0.1
-0.5
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
I
C
=-50µA
I
C
=-1mA
I
E
=-50µA
V
CB
=-40V
V
EB
=-5V
I
C
=-2A, I
B
=-100mA
V
CE
=-2V, I
C
=-100mA
V
CE
=-2V, I
C
=-500mA, f=100MHz
V
CB
=-10V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
Rank
H
FE
range
P
82~180
Q
120~270
R
180~390
S
270~560
BTB1424L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
