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BTB1412J3 参数 Datasheet PDF下载

BTB1412J3图片预览
型号: BTB1412J3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT PNP外延平面晶体管 [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 141 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1412J3的Datasheet PDF文件第1页浏览型号BTB1412J3的Datasheet PDF文件第2页浏览型号BTB1412J3的Datasheet PDF文件第4页  
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage---VCE(SAT)(mV)
1000
Spec. No. : C816J3
Issued Date : 2003.05.15
Revised Date : 2004.07.02
Page No. : 3/4
Saturation Voltage vs Collector Current
VCE=5V
Current Gain---HFE
100
IC=40IB
10
IC=20IB
IC=10IB
1
1
10
100
1000
10000
100
VCE=2V
VCE=1V
10
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
10000
Saturation Voltage---VBE(SAT)(mV)
12
10
8
6
4
2
Power Derating Curve
IC=10IB
1000
Power Dissipation---PD(W)
100
1
10
100
1000
10000
0
0
50
100
150
200
Collector Current---IC(mA)
Case Temperature---TC(℃ )
Power Derating Curve
1.2
Power Dissipation---PD(W)
1
0.8
0.6
0.4
0.2
0
0
50
100
150
200
Ambient Temperature---TA(℃ )
BTB1412J3
CYStek Product Specification