Spec. No. : C815I3
Issued Date : 2005.03.29
Revised Date : 2009.02.04
Page No. : 2/ 6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
-25
-20
-5
Unit
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
V
-5
A
A
-8 (Note 1)
-0.5
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Pd
Pd
Tj
1
10
150
-55~+150
W
°C
°C
Tstg
.
Note : 1 Single Pulse Pw=10ms
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
-25
-20
-5
-
-
-
-
-
-
-
-
-
-
-
V
V
V
μA
μA
mV
V
IC=-10μA, IE=0
IC=-1mA, IB=0
IE=-10μA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
IC=-3A, IB=-60mA
IC=-3A, IB=-60mA
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
VCE=-5V, IC=-200mA, f =100MHz
VCB=-10V, f =1MHz
-0.5
-0.5
-500
-1.3
380
-
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
-380
-1.0
-
-
190
60
-
-
-
-
320
60
-
-
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
Package
TO-251
Shipping
Marking
B1205
BTB1205I3
80 pcs / tube, 50 tubes / box
(RoHS compliant)
BTB1205I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
