CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C812M3
Issued Date : 2003.05.25
Revised Date : 2006.02.15
Page No. : 1/5
BTB1188M3
Features
•
Low V
CE
(sat), V
CE
(sat)=-0.45 V (typical), at I
C
/ I
B
= -2A / -0.5A
•
Excellent current gain characteristics
•
Complementary to BTD1766M3
•
Pb-free package
Symbol
BTB1188M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Power Dissipation
Junction Temperature
Storage Temperature
Note
:
1. Single Pulse , Pw=10ms
BTB1188M3
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
d
P
d
Tj
Tstg
Limits
-40
-30
-5
-2
-5
(Note 1)
0.5
2
(Note 2)
150
-55~+150
Unit
V
V
V
A
A
W
W
°C
°C
2. When mounting on a 40
×40 ×0.7
mm ceramic board.
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
