Spec. No. : C824K3
Issued Date : 2008.10.31
Revised Date :2013.10.09
Page No. : 2/7
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
Unit
V
V
V
A
-120
-100
-5
-1
-2 (Note)
900
139
A
mW
°C/W
°C
150
Storage Temperature
-55~+150
°C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Characteristics
(Ta=25°C)
Symbol
BVCBO
Min.
-120
-100
-5
-
-
-
-
-
Typ.
Max.
Unit
Test Conditions
-
-
-
-
-
-
-
V
V
V
nA
nA
V
V
V
V
-
IC=-50μA
BVCEO
BVEBO
ICBO
IC=-1mA
IE=-50μA
VCB=-100V
VEB=-4V
-100
-100
-0.5
-0.5
-1.2
-0.75
560
-
IEBO
-
-0.16
-0.3
-
*VCE(sat)
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE
IC=-500mA, IB=-50mA
IC=-1A, IB=-100mA
IC=-1A, IB=-50mA
-
120
-
-
-
VCE=-5V, IC=-5mA
VCE=-5V, IC=-200mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
fT
Cob
200
11
MHz
pF
-
-
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Q
R
S
Range
120~270
180~390
270~560
BTB1198K3
CYStek Product Specification