欢迎访问ic37.com |
会员登录 免费注册
发布采购

BTB1184J3 参数 Datasheet PDF下载

BTB1184J3图片预览
型号: BTB1184J3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT PNP外延平面晶体管 [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 170 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号BTB1184J3的Datasheet PDF文件第1页浏览型号BTB1184J3的Datasheet PDF文件第3页浏览型号BTB1184J3的Datasheet PDF文件第4页浏览型号BTB1184J3的Datasheet PDF文件第5页  
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
*h
FE
3
f
T
Cob
Min.
-50
-50
-6
-
-
-
-
52
82
52
-
-
Typ.
-
-
-
-
-
-1
-
-
-
80
35
Max.
-
-
-
-1
-1
-1
-1.5
-
560
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Spec. No. : C817J3
Issued Date : 2003.04.18
Revised Date : 2005.10.04
Page No. : 2/5
Test Conditions
I
C
=-50µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-50µA, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-4V, I
C
=0
I
C
=-2A, I
B
=-0.1A
I
C
=-2A, I
B
=-0.2A
V
CE
=-2V, I
C
=-20mA
V
CE
=-3V, I
C
=-500mA
V
CE
=-2V, I
C
=-1A
V
CE
=-5V, I
C
=-0.1A, f=100MHz
V
CB
=-10V, f=1MHz
*Pulse Test : Pulse Width
≤380µs,
Duty Cycle≤2%
Classification Of h
FE
2
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
Ordering Information
Device
BTD1184J3
Package
TO-252
(Pb-free)
Shipping
2500 pcs / Tape & Reel
Marking
B1184
BTB1184J3
CYStek Product Specification