CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C236L3
Issued Date : 2005.08.16
Revised Date : 2005.08.18
Page No. : 1/4
BTA1727L3
Features
•
High breakdown voltage, BV
CEO
=-400V
•
Low saturation voltage
•
High switching speed.
•
Complementary to BTD2568L3
•
Pb-free package
Symbol
BTA1727L3
Outline
SOT-223
C
E
B：Base
C：Collector
E：Emitter
C
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulse)
Base Current
Power Dissipation @T
C
=25℃
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
Pd
Tj
Tstg
Limits
-400
-400
-6
-300
-1
-100
5
150
-55~+150
Unit
V
V
V
mA
A
mA
W
°C
°C
BTA1727L3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
