CYStech Electronics Corp.
PNP Epitaxial Planar Power Transistor
Spec. No. : C657FP
Issued Date : 2004.09.01
Revised Date :2007.12.27
Page No. : 1/4
BTA1640FP
Features
•
Low collector-emitter saturation voltage, V
CE(sat)
= -0.4V(max) @ I
C
= -3A, I
B
=-0.1A
•
Excellent current gain linearity
•
Pb-free package
Symbol
BTA1640FP
Outline
TO-220FP
B:Base
C:Collector
E:Emitter
BCE
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ T
A
=25℃
Power Dissipation @ T
C
=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw
≦
380μs, Duty
≦
2%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
D
P
D
R
θJA
R
θJC
Tj
Tstg
Limits
-50
-50
-5
-7
-10
(Note 1)
2
40
62.5
3.125
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
BTA1640FP
CYStek Product Specification