CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307M3
Issued Date : 2007.01.10
Revised Date :
Page No. : 1/5
BTA1514M3
Description
•
The BTA1514M3 is designed for general purpose application requiring high breakdown voltage.
•
Large I
C
, I
C( Max)
= -0.6A
•
High BV
CEO
, BV
CEO
= -150V
•
Complementary to BTC3906M3
.
•
Pb-free package
Symbol
BTA1514M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pd
Limits
-160
-150
-5
-0.6
0.6
1
2
(Note 1)
(Note 2)
Unit
V
V
V
A
W
W
W
Junction Temperature
Tj
Storage Temperature
Tstg
Note
:
1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 .
When mounted on ceramic with area measuring 40×40×1 mm
BTA1514M3
150
-55~+150
°C
°C
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
