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BAV99N3 参数 Datasheet PDF下载

BAV99N3图片预览
型号: BAV99N3
PDF下载: 下载PDF文件 查看货源
内容描述: 高倍速双二极管 [High -Speed double diode]
分类和应用: 二极管
文件页数/大小: 4 页 / 170 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Absolute Maximum Ratings
@T
A
=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
t=1s
Total power dissipation(
Note 1
)
Junction Temperature
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Spec. No. : C328N3
Issued Date : 2003.04.08
Revised Date
Page No. : 2/4
Symbol
V
RRM
V
R
I
F
I
FRM
I
FSM
Ptot
T
j
T
stg
Min
-
-
-
-
-
-
-
-
-65
Max
85
75
215
125
450
4
1
0.5
250
150
+150
Unit
V
V
mA
mA
A
A
A
mW
°C
°C
Electrical Characteristics
@ Tj=25℃ unless otherwise specified
Parameters
Forward voltage
Symbol
V
F
Conditions
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=25V
V
R
=75V
V
R
=25V,Tj=150℃
V
R
=75V,Tj=150℃
V
R
=0V, f=1MHz
when switched from I
F
=10mA to
I
R
=10mA,R
L
=100Ω, measured
at I
R
=1mA
when switched from I
F
=10mA
tr=20ns
Min
-
Typ.
-
Max
715
855
1
1.25
30
1
30
50
1.5
4
1.75
Unit
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
I
R
Cd
trr
Vfr
-
-
-
-
-
-
-
-
Thermal Characteristics
Symbol
Rth,j-tp
Rth, j-a
Parameter
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
Conditions
Note 1
Value
360
500
Unit
��
/W
/W
Note 1: Device mounted on an FR-4 PCB.
BAV99N3
CYStek Product Specification