CYStech Electronics Corp.
Absolute Maximum Ratings
Spec. No. : C302N3-H
Issued Date : 2003.04.14
Revised Date :
Page No. : 2/4
•
Maximum Temperatures
Storage Temperature Tstg ................................................................................................... -65~+150
°C
Junction Temperature Tj .............................................................................................................. +125°C
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) Ptot
(Note)
......................................................................... 230 mW
•
Maximum Voltages and Currents (Ta=25°C)
Repetitive Peak Reverse Voltage V
RRM
.............................................................................................. 30 V
Continuous Forward Current I
F
................................................................................................... 200 mA
Repetitive Peak Forward Current(tp≤1s,duty cycle≤0.5)………………………………………… 300mA
Non-repetitive Peak Forward Current (tp<10ms, sinusoidal) I
FSM
............................................... 600 mA
Note:for double diodes, Ptot is the total power dissipation of both diodes.
Characteristics
(Ta=25°C)
Characteristic
Reverse Breakdown Voltage
Symbol
V
BR
V
F
(1)
V
F
(2)
Forward Voltage (Note 1)
V
F
(3)
V
F
(4)
V
F
(5)
Reverse Leakage Current (Note 2)
Diode Capacitance
Reverse Recovery Time
Notes
:
1.pulse test, tp=380µs,duty cycle<2%.
2.pulse test, tp=5ms,duty cycle<2%.
Condition
I
R
=100µA
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA
V
R
=25V,Tj=25℃
V
R
=1V, f=1MHz
I
F
=I
R
=10mA R
L
=100Ω
measured at I
R
=1mA
Min.
30
-
-
-
-
-
-
-
-
Max.
-
240
320
400
500
800
2
10
5
Unit
V
mV
mV
mV
mV
mV
µA
pF
ns
I
R
C
D
trr
BAT54N3/BAT54AN3/BAT54CN3/BAT54SN3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
