欢迎访问ic37.com |
会员登录 免费注册
发布采购

1N5817 参数 Datasheet PDF下载

1N5817图片预览
型号: 1N5817
PDF下载: 下载PDF文件 查看货源
内容描述: 1.0Amp硅肖特基势垒整流器 [1.0Amp Silicon Schottky Barrier Rectifiers]
分类和应用:
文件页数/大小: 3 页 / 137 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
 浏览型号1N5817的Datasheet PDF文件第1页浏览型号1N5817的Datasheet PDF文件第3页  
CYStech Electronics Corp.
Characteristic Curves
Forward Current Derating Curve
1.2
Peak Forward Surge Current---IFSM(A)
30
25
20
15
10
5
0
0
50
100
150
1
10
Spec. No. : C331LB
Issued Date : 2004.07.05
Revised Date :
Page No. : 2/3
Maximum Non-Repetitive Forward Surge Current
Average Forward Current---Io(A)
1
0.8
0.6
0.4
0.2
0
Ambient Temperature---TA(℃)
Forward Current vs Forward Voltage
Single Phase, Half Wave
60Hz, Resistive or Inductive
Load
0.375"(0.95mm)lead length
Tj=25℃, 8.3ms Single
Half Sine Wave
JEDEC method
100
Number of Cycles at 60Hz
Junction Capacitance vs Reverse Voltage
350
100
1N5817
10
1N5818-5819
Junction Capacitance---CJ(pF)
300
250
200
150
100
50
0
Forward Current---IF(A)
1
0.1
Tj=25℃, Pulse
width=300μs
1% Duty cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
Forward Voltage---VF(V)
Reverse Leakage Current vs Reverse Voltage
100
Reverse Leakage Current---IR(mA)
0.01
0.1
1
10
100
Reverse Voltage---VR(V)
10
1
Tj=75℃
0.1
Tj=25℃
0.01
0
20
40
60
80
100
120
140
Percentage Rated Peak
Reverse Voltage---(%)
1N581XLB
CYStek Product Specification