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CY7C141-25JC 参数 Datasheet PDF下载

CY7C141-25JC图片预览
型号: CY7C141-25JC
PDF下载: 下载PDF文件 查看货源
内容描述: 1K ×8双端口静态RAM [1K x 8 Dual-Port Static RAM]
分类和应用: 内存集成电路静态存储器
文件页数/大小: 19 页 / 573 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C130/CY7C131
CY7C140/CY7C141
Switching Waveforms
(continued)
Write Cycle No. 1 (OE Three-States Data I/Os—Either Port
Either Port
t
WC
ADDRESS
t
SCE
CE
t
SA
R/W
t
SD
DATA
IN
OE
t
HZOE
D
OUT
HIGH IMPEDANCE
DATA VALID
t
HD
t
AW
t
PWE
t
HA
Write Cycle No. 2 (R/W Three-States Data I/Os—Either Port)
t
WC
ADDRESS
t
SCE
CE
t
SA
R/W
t
SD
DATA
IN
t
HZWE
DATA
OUT
Notes:
22. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
PWE
or t
HZWE
+ t
SD
to allow the data I/O pins to enter high impedance
and for data to be placed on the bus for the required t
SD
.
23. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
t
HA
t
AW
t
PWE
t
HD
DATA VALID
t
LZWE
HIGH IMPEDANCE
Document #: 38-06002 Rev. *D
Page 9 of 19