CY7C1041BV33
Switching Characteristics
[4]
Over the Operating Range (continued)
-20
Parameter
READ CYCLE
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
t
DBE
t
LZBE
t
HZBE
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
t
BW
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
[5, 6]
CE LOW to Low Z
[6]
CE HIGH to High Z
[5, 6]
-25
Max.
Min.
25
20
25
5
20
8
25
10
0
8
10
5
8
10
0
20
8
25
10
0
8
10
25
15
15
0
0
15
10
0
5
8
10
15
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
20
3
0
3
0
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
[6]
0
WRITE CYCLE
[7, 8]
20
13
13
0
0
13
9
0
3
13
WE LOW to High Z
[5, 6]
Byte Enable to End of Write
Data Retention Characteristics
Over the Operating Range (For L version only)
Parameter
V
DR
I
CCDR
t
CDR[3]
t
R[9]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
V
CC
= V
DR
= 2.0V,
CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Conditions
[10]
Min.
2.0
330
0
t
RC
Max.
Unit
V
µA
ns
ns
Notes:
9. t
r
< 3 ns for the -12 and -15 speeds. t
r
< 5 ns for the -20 and slower speeds.
10. No input may exceed V
CC
+ 0.5V.
Document #: 38-05168 Rev. **
Page 5 of 11
CYPRESS [ CYPRESS SEMICONDUCTOR ]
