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CY7C1009B-12VC 参数 Datasheet PDF下载

CY7C1009B-12VC图片预览
型号: CY7C1009B-12VC
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K x 8 Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 199 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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009B
CY7C109B
CY7C1009B
128K x 8 Static RAM
Features
• High speed
— t
AA
= 12 ns
• Low active power
— 495 mW (max. 12 ns)
• Low CMOS standby power
— 55 mW (max.) 4 mW
• 2.0V Data Retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE
1
, CE
2
, and OE options
put Enable (OE), and three-state drivers. Writing to the device
is accomplished by taking Chip Enable One (CE
1
) and Write
Enable (WE) inputs LOW and Chip Enable Two (CE
2
) input
HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is then
written into the location specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip En-
able One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location speci-
fied by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
The CY7C109B is available in standard 400-mil-wide SOJ and
32-pin TSOP type I packages. The CY7C1009B is available in
a 300-mil-wide SOJ package. The CY7C1009B and
CY7C109B are functionally equivalent in all other respects.
Functional Description
The CY7C109B / CY7C1009B is a high-performance CMOS
static RAM organized as 131,072 words by 8 bits. Easy mem-
ory expansion is provided by an active LOW Chip Enable
(CE
1
), an active HIGH Chip Enable (CE
2
), an active LOW Out-
Logic Block Diagram
Pin Configurations
SOJ
Top View
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
I/O
0
I/O
1
I/O
2
GND
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
CE
2
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
I/O
0
INPUT BUFFER
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
512 x 256 x 8
ARRAY
109B–2
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
109B–3
I/O
3
I/O
4
I/O
5
CE
1
CE
2
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
TSOP I
Top View
(not to scale)
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
109B–1
Selection Guide
Maximum Access Time (ns)
Maximum Operating Current (mA)
Maximum CMOS Standby Current (mA)
Maximum CMOS Standby Current (mA)
Low Power Version
Cypress Semiconductor Corporation
Document #: 38-05038 Rev. **
7C109B-12
7C1009B-12
12
90
10
2
7C109B-15
7C1009B-15
15
80
10
2
7C109B-20
7C1009B-20
20
75
10
2
San Jose
7C109B-25
7C1009B-25
25
70
10
-
7C109B-35
7C1009B-35
35
60
10
-
3901 North First Street
CA 95134 • 408-943-2600
Revised August 24, 2001