CY7C109B
CY7C1009B
Data Retention Characteristics
Over the Operating Range (Low
Power version only)
Parameter
V
DR
I
CCDR
t
CDR
t
R
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
No input may exceed V
CC
+ 0.5V
V
CC
= V
DR
= 2.0V,
CE
1
> V
CC
– 0.3V or CE
2
< 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Min.
2.0
150
0
200
Max.
Unit
V
µA
ns
µs
Data Retention Waveform
DATA RETENTION MODE
V
CC
4.5V
t
CDR
CE
V
DR
>
2V
4.5V
t
R
Switching Waveforms
Read Cycle No. 1
[10, 11]
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)
[11, 12]
ADDRESS
t
RC
CE
1
CE
2
t
ACE
OE
t
DOE
DATA OUT
V
CC
SUPPLY
CURRENT
t
LZOE
HIGH IMPEDANCE
t
LZCE
t
PU
50%
t
HZOE
t
HZCE
DATA VALID
t
PD
50%
I
SB
I
CC
HIGH
IMPEDANCE
Notes:
10. Device is continuously selected. OE, CE
1
= V
IL
, CE
2
= V
IH
.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE
1
transition LOW and CE
2
transition HIGH.
Document #: 38-05038 Rev. *C
Page 4 of 10
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