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CY7C109B-15VC 参数 Datasheet PDF下载

CY7C109B-15VC图片预览
型号: CY7C109B-15VC
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K x 8 Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 10 页 / 379 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C109B
CY7C1009B
128K x 8 Static RAM
Features
• High speed
— t
AA
= 12 ns
• Low active power
— 495 mW (max.)
• Low CMOS standby power
— 11 mW (max.) (L Version)
• 2.0V Data Retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE
1
, CE
2
, and OE options
• CY7C109B is available in standard 400-mil-wide SOJ
and 32-pin TSOP type I packages. The CY7C1009B is
available in a 300-mil-wide SOJ package
Functional Description
[1]
The CY7C109B/CY7C1009B is a high-performance CMOS
static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE
1
), an active HIGH Chip Enable (CE
2
), an active LOW
Output Enable (OE), and tri-state drivers. Writing to the device
is accomplished by taking Chip Enable One (CE
1
) and Write
Enable (WE) inputs LOW and Chip Enable Two (CE
2
) input
HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is then
written into the location specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
CY7C109B is available in standard 400-mil-wide SOJ and 32-
pin TSOP type I packages. The CY7C1009B is available in a
300-mil-wide SOJ package. The CY7C109B and CY7C1009B
are functionally equivalent in all other respects
Logic Block Diagram
Pin Configurations
[2]
SOJ
Top View
NC
A
16
A
14
A
12
A7
A6
A5
I/O
0
INPUT BUFFER
A4
A3
A2
A1
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
1
ROW DECODER
I/O
2
SENSE AMPS
128K x 8
ARRAY
I/O
0
I/O
1
I/O
2
GND
A
11
A
9
A
8
A
13
WE
CE
2
A
15
V
CC
NC
A
16
A
14
A
12
A
7
A
6
A
5
A
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A
15
CE
2
WE
A
13
A
8
A
9
A
11
OE
A
10
CE
1
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A
10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
GND
I/O
2
I/O
1
I/O
0
A
0
A
1
A
2
A
3
I/O
3
I/O
4
I/O
5
CE
1
CE
2
WE
OE
COLUMN
DECODER
POWER
DOWN
I/O
6
I/O
7
TSOP I
Top View
(not to scale)
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
2. NC pins are not connected on the die.
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Cypress Semiconductor Corporation
Document #: 38-05038 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 3, 2006