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CY62256LL-70PC 参数 Datasheet PDF下载

CY62256LL-70PC图片预览
型号: CY62256LL-70PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ( 32K ×8 )静态RAM [256K (32K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 476 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62256
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential
(Pin 28 to Pin 14) .............................................. –0.5V to +7V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
................................ –0.5V to V
CC
+ 0.5V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Commercial
Industrial
Automotive
Ambient Temperature (T
A
)
[4]
0
°
C to +70
°
C
–40
°
C to +85
°
C
–40
°
C to +125
°
C
V
CC
5V
±
10%
5V
±
10%
5V
±
10%
Electrical Characteristics
Over the Operating Range
CY62256−55
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
V
CC
Operating Supply
Current
GND < V
I
< V
CC
V
CC
= 5.5V,
I
OUT
= 0 mA,
f = f
Max
= 1/t
RC
L
LL
L
LL
L
LL - Com’l
LL - Ind’l
LL - Auto
Output Leakage Current GND < V
O
< V
CC
, Output Disabled
Test Conditions
V
CC
= Min., I
OH
=
−1.0
mA
V
CC
= Min., I
OL
= 2.1 mA
2.2
–0.5
–0.5
–0.5
25
25
0.4
0.3
2
0.1
0.1
0.1
Min. Typ.
[2]
2.4
0.4
V
CC
+0.5V
0.8
+0.5
+0.5
50
50
0.6
0.5
50
5
10
15
2.2
–0.5
–0.5
–0.5
25
25
0.4
0.3
2
0.1
0.1
Max.
2.4
0.4
V
CC
+0.5V
0.8
+0.5
+0.5
50
50
0.6
0.5
50
5
10
µA
mA
CY62256−70
Min. Typ.
[2]
Max.
Unit
V
V
V
V
µA
µA
mA
I
SB1
Automatic CE
V
CC
= 5.5V, CE > V
IH
,
Power-down Current— V
IN
> V
IH
or V
IN
< V
IL
,
TTL Inputs
f = f
Max
V
CC
= 5.5V,
Automatic CE
Power-down Current— CE > V
CC
0.3V
CMOS Inputs
V
IN
> V
CC
0.3V, or
V
IN
< 0.3V, f = 0
I
SB2
Capacitance
[5]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
Thermal Resistance
[5]
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch,
2-layer printed circuit board
DIP
75.61
43.12
SOIC
76.56
36.07
TSOP
93.89
24.64
RTSOP
93.89
24.64
Unit
°C/W
°C/W
Notes:
3. V
IL
(min.) =
2.0V for pulse durations of less than 20 ns.
4. T
A
is the “Instant-On” case temperature.
5. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05248 Rev. *F
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