CY62256V
Capacitance
[5]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ.)
Max.
6
8
Unit
pF
pF
Thermal Resistance
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
[6]
Thermal Resistance
(Junction to Case)
[5]
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
2-layer printed circuit board
SOIC
68.45
26.94
TSOPI
87.62
23.73
RTSOPI
87.62
23.73
Unit
°C/W
°C/W
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
50 pF
INCLUDING
JIG AND
SCOPE
R2
V
CC
10%
GND
< 5 ns
Equivalent to:
THEVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
ALL INPUT PULSES
90%
90%
10%
< 5 ns
Parameter
R1
R2
R
TH
V
TH
3.3V
1100
1500
645
1.750
Units
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
(Over the Operating Range)
Parameter
V
DR
I
CCDR
Description
V
CC
for Data Retention
Data Retention Current
V
CC
= 1.4V, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Com’l
Ind’l
Auto
t
CDR[6]
t
R[6]
Chip Deselect to Data
Retention Time
Operation Recovery Time
0
t
RC
Conditions
[6]
Min.
1.4
0.1
0.1
0.1
3
6
50
ns
ns
Typ.
[2]
Max.
Unit
V
µA
Data Retention Waveform
DATA RETENTION MODE
V
CC
V
CC(min)
t
CDR
V
DR
> 1.4V
V
CC(min)
t
R
CE
Notes:
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
CC
+ 0.3V.
Document #: 38-05057 Rev. *F
Page 4 of 12
CYPRESS [ CYPRESS SEMICONDUCTOR ]
