47V
CY62147CV25/30/33
MoBL™
256K x 16 Static RAM
Features
• High Speed
— 55 ns and 70 ns availability
• Voltage range:
— CY62147CV25: 2.2V–2.7V
— CY62147CV30: 2.7V–3.3V
— CY62147CV33: 3.0V–3.6V
• Pin Compatible with CY62147V
• Ultra-low active power
— Typical active current: 1.5 mA @ f = 1 MHz
•
•
•
•
— Typical active current: 5.5 mA @ f = f
max
(70 ns speed)
Low standby power
Easy memory expansion with CE and OE features
Automatic power-down when deselected
CMOS for optimum speed/power
cantly reduces power consumption by 80% when addresses
are not toggling. The device can also be put into standby mode
reducing power consumption by more than 99% when dese-
lected (CE HIGH or both BLE and BHE are HIGH). The in-
put/output pins (I/O
0
through I/O
15
) are placed in a high-im-
pedance state when: deselected (CE HIGH), outputs are
disabled (OE HIGH), both Byte High Enable and Byte Low
Enable are disabled (BHE, BLE HIGH), or during a write oper-
ation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
0
through I/O
7
), is
written into the location specified on the address pins (A
0
through A
17
). If Byte High Enable (BHE) is LOW, then data
from I/O pins (I/O
8
through I/O
15
) is written into the location
specified on the address pins (A
0
through A
17
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
0
to I/O
7
. If Byte High Enable (BHE) is
LOW, then data from memory will appear on I/O
8
to I/O
15
. See
the truth table at the back of this data sheet for a complete
description of read and write modes.
The CY62147CV25/30/33 are available in a 48-ball FBGA
package.
Functional Description
The CY62147CV25/30/33 are high-performance CMOS static
RAMs organized as 256K words by 16 bits. These devices
feature advanced circuit design to provide ultra-low active cur-
rent. This is ideal for providing More Battery Life™ (MoBL™)
in portable applications such as cellular telephones. The de-
vices also have an automatic power-down feature that signifi-
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
256K x 16
RAM Array
2048 x 2048
SENSE AMPS
I/O
0
– I/O
7
I/O
8
– I/O
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
11
A
12
A
13
A
14
A
15
A
16
CE
Pow
-
er Down
Circuit
BHE
BLE
Cypress Semiconductor Corporation
Document #: 38-05202 Rev. *A
•
3901 North First Street
A
17
•
San Jose
•
CA 95134 • 408-943-2600
Revised April 24, 2002
CYPRESS [ CYPRESS SEMICONDUCTOR ]
