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CY62128ELL-45SXI 参数 Datasheet PDF下载

CY62128ELL-45SXI图片预览
型号: CY62128ELL-45SXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128千×8 )静态RAM [1-Mbit (128 K x 8) Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管PC
文件页数/大小: 19 页 / 970 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62128E MoBL
®
1-Mbit (128 K × 8) Static RAM
1-Mbit (128 K × 8) Static RAM
Features
Functional Description
The CY62128E is a high performance CMOS static RAM
organized as 128K words by 8 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life™ (MoBL
) in portable
applications. The device also has an automatic power down
feature that significantly reduces power consumption when
addresses are not toggling. Placing the device into standby
mode reduces power consumption by more than 99 percent
when deselected (CE
1
HIGH or CE
2
LOW). The eight input and
output pins (I/O
0
through I/O
7
) are placed in a high impedance
state when the device is deselected (CE
1
HIGH or CE
2
LOW),
the outputs are disabled (OE HIGH), or a write operation is in
progress (CE
1
LOW and CE
2
HIGH and WE LOW)
To write to the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location specified
on the address pins (A
0
through A
16
).
To read from the device, take Chip Enable (CE
1
LOW and CE
2
HIGH) and Output Enable (OE) LOW while forcing Write Enable
(WE) HIGH. Under these conditions, the contents of the memory
location specified by the address pins appear on the I/O pins.
The CY62128E device is suitable for interfacing with processors
that have TTL I/P levels. It is not suitable for processors that
require CMOS I/P levels. Please see
for more details and suggested alternatives.
Very high speed: 45 ns
Temperature ranges
Industrial: –40 °C to +85 °C
Automotive-A: –40 °C to +85 °C
Automotive-E: –40 °C to +125 °C
Voltage range: 4.5 V to 5.5 V
Pin compatible with CY62128B
Ultra low standby power
Typical standby current: 1
A
Maximum standby current: 4
A
(Industrial)
Ultra low active power
Typical active current: 1.3 mA at f = 1 MHz
Easy memory expansion with CE
1
, CE
2,
and OE features
Automatic power down when deselected
complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Offered in standard Pb-free 32-pin STSOP, 32-pin SOIC, and
32-pin thin small outline package (TSOP) Type I packages
Logic Block Diagram
CE1
CE2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
WE
OE
INPUT BUFFER
I/O
0
I/O
I/O
1
I/O
0
1
ROW DECODER
SENSE AMPS
I/O
2
I/O 2
I/O
3
I/O 3
I/O
I/O
4
I/O
I/O
5
I/O 6
I/O
6
128K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
I/O 7
I/O
7
A12
A14
A13
A16
A15
Cypress Semiconductor Corporation
Document Number: 38-05485 Rev. *K
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 3, 2013