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CY62128BLL-70SI 参数 Datasheet PDF下载

CY62128BLL-70SI图片预览
型号: CY62128BLL-70SI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8静态RAM [128K x 8 Static RAM]
分类和应用:
文件页数/大小: 11 页 / 341 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62128B
MoBL
128K x 8 Static RAM
Features
• Temperature Ranges
— Commercial: 0°C to 70°C
— Industrial: –40°C to 85°C
— Automotive: –40°C to 125°C
• 4.5V – 5.5V operation
• CMOS for optimum speed/power
• Low active power
(70 ns, LL version, Commercial, Industrial)
— 82.5 mW (max.) (15 mA)
• Low standby power
(70 ns, LL version, Commercial, Industrial)
— 110
µW
(max.) (15
µA)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE
1
, CE
2
, and OE options
Functional Description
[1]
The CY62128B is a high-performance CMOS static RAM
organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE
1
),
an active HIGH Chip Enable (CE
2
), an active LOW Output
Enable (OE), and three-state drivers. This device has an
automatic power-down feature that reduces power
consumption by more than 75% when deselected.
Writing to the device is accomplished by taking Chip Enable
One (CE
1
) and Write Enable (WE) inputs LOW and Chip
Enable Two (CE
2
) input HIGH. Data on the eight I/O pins (I/O
0
through I/O
7
) is then written into the location specified on the
address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable One (CE
1
) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE
2
) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
1
HIGH or CE
2
LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE
1
LOW, CE
2
HIGH, and WE LOW).
The CY62128B is available in a standard 450-mil-wide SOIC,
32-pin TSOP type I and STSOP packages.
Logic Block Diagram
INPUT BUFFER
A0
A1
A2
A3
A4
A5
A6
A7
A8
ROW DECODER
I/O 0
I/O 1
SENSE AMPS
I/O 2
I/O 3
I/O 4
I/O 5
POWER
DOWN
512x 256x 8
ARRAY
CE1
CE2
WE
OE
COLUMN
DECODER
I/O 6
I/O 7
Note:
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
A9
A 10
A 11
A 12
A 13
A 14
A 15
A 16
Cypress Semiconductor Corporation
Document #: 38-05300 Rev. *C
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised February 14, 2005