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AM29LV400B-100FE 参数 Datasheet PDF下载

AM29LV400B-100FE图片预览
型号: AM29LV400B-100FE
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory]
分类和应用:
文件页数/大小: 40 页 / 519 K
品牌: CYPRESS [ CYPRESS ]
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P R E L I M I N A R Y  
against inadvertent writes (refer to Table 5 for com-  
mand definitions). In addition, the following hardware  
data protection measures prevent accidental erasure  
or programming, which might otherwise be caused by  
spurious system level signals during VCC power-up  
and power-down transitions, or from system noise.  
START  
RESET# = V  
(Note 1)  
ID  
Low V  
Write Inhibit  
CC  
When VCC is less than VLKO, the device does not ac-  
cept any write cycles. This protects data during VCC  
power-up and power-down. The command register and  
all internal program/erase circuits are disabled, and the  
device resets. Subsequent writes are ignored until VCC  
is greater than VLKO. The system must provide the  
proper signals to the control pins to prevent uninten-  
Perform Erase or  
Program Operations  
RESET# = V  
IH  
tional writes when VCC is greater than VLKO  
.
Temporary Sector  
Unprotect Completed  
(Note 2)  
Write Pulse “Glitch” Protection  
Noise pulses of less than 5 ns (typical) on OE#, CE# or  
WE# do not initiate a write cycle.  
20514C-5  
Logical Inhibit  
Notes:  
1. All protected sectors unprotected.  
Write cycles are inhibited by holding any one of OE# =  
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,  
CE# and WE# must be a logical zero while OE# is a  
logical one.  
2. All previously protected sectors are protected once  
again.  
Power-Up Write Inhibit  
Figure 1. Temporary Sector Unprotect Operation  
If WE# = CE# = VIL and OE# = VIH during power up, the  
device does not accept commands on the rising edge  
of WE#. The internal state machine is automatically  
reset to reading array data on power-up.  
Hardware Data Protection  
The command sequence requirement of unlock cycles  
for programming or erasing provides data protection  
Am29LV400  
12