P R E L I M I N A R Y
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
= V to V , V = V
CC max
Min
Max
Unit
I
Input Load Current
V
±1.0
µA
LI
IN
SS
CC CC
V
= V
;
CC
CC max
I
A9 Input Load Current
Output Leakage Current
35
µA
LIT
A9 = 13.0 V
= V to V , V = V
CC max
I
V
±1.0
16
4
µA
mA
mA
LO
OUT
SS
CC CC
CE = V OE
V
at 5 MHz
IL,
=
=
IH
IH
V
Active Current
CC
I
CC1
(Note 1)
CE = V OE
V
V
at 1 MHz
IL,
V
Active Current
CC
I
I
CE = V OE
30
5
mA
µA
µA
CC2
IL,
=
IH
(Notes 1, 2, and 4)
V
= V
;
CC
CC max
V
Standby Current
CC3
CC
CC
CE, RESET = V ± 0.3 V
CC
V
= V
; CE = V ± 0.3 V;
CC
CC max CC
I
I
V
Standby Current During Reset
5
CC4
RESET = V ± 0.3 V
SS
Automatic Sleep Mode (Note 3)
Input Low Voltage
V
= V ± 0.3 V; V = V ± 0.3 V
5
µA
V
CC5
IH
CC
IL
SS
V
-0.5
0.8
IL
V
Input High Voltage
0.7 x V
V + 0.3
CC
V
IH
CC
Voltage for Autoselect andTemporary
Sector Unprotect
V
V
= 3.3 V
11.5
12.5
0.45
V
ID
CC
V
Output Low Voltage
I
= 4.0 mA, V = V
V
V
OL
OL
CC
CC min
V
I
I
= -2.0 mA, V = V
0.85 V
OH1
OH
OH
CC
CC min
CC
Output High Voltage
V
= -100 µA, V = V
V
-0.4
OH2
CC
CC min
CC
V
Low V Lock-Out Voltage (Note 4)
2.3
2.5
V
LKO
CC
Notes:
1. The I current listed includes both the DC operating current and the frequency dependent component (at 5 MHz). The
CC
frequency component typically is less than 2 mA/MHz, with OEat V .
IH
2. I active while Embedded Erase or Embedded Program is in progress.
CC
3. Automatic sleep mode enables the low power mode when addresses remain stable for 200 ns. Typical sleep mode current is
200 nA.
4. Not 100% tested.
26
Am29LV008T/Am29LV008B
CYPRESS [ CYPRESS ]
