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AM29LV008T-120FEB 参数 Datasheet PDF下载

AM29LV008T-120FEB图片预览
型号: AM29LV008T-120FEB
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 39 页 / 142 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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PRELIMINARY
Am29LV008T/Am29LV008B
8 Megabit (1,048,576 x 8-Bit) CMOS 3.0 Volt-only,
Sectored Flash Memory
3.0 V-only Flash
DISTINCTIVE CHARACTERISTICS
s
Single power supply operation
— Extended voltage range: 2.7 to 3.6 volt read and
write operations for battery-powered
applications
— Standard voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
s
High performance
— Extended voltage range: access times as fast as
100 ns
— Standard voltage range: access times as fast as
90 ns
s
Ultra low power consumption
— Automatic Sleep Mode: 200 nA typical
— Standby mode: 200 nA typical
— Read mode: 2 mA/MHz typical
— Program/erase mode: 20 mA typical
s
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
fifteen 64 Kbyte sectors
— Supports control code and data storage on a
single device
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s
Top or bottom boot block configurations
available
s
Embedded Algorithms
— Embedded Erase algorithms automatically
preprogram and erase the entire chip or any
combination of designated sectors
— Embedded Program algorithms automatically
write and verify bytes or words at specified
addresses
s
Minimum 100,000 write cycle guarantee per
sector
s
Package option
— 40-pin TSOP
s
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s
Data Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s
Ready/Busy pin
— Provides a hardware method of detecting
program or erase cycle completion
s
Erase suspend/resume feature
— Provides the ability to suspend the erase
operation in any sector, read data from or
program data to any other sector, then return to
the original sector and complete the initial erase
operation
s
Hardware reset pin (RESET)
— Hardware method to reset the device to the read
mode
GENERAL DESCRIPTION
The Am29LV008 is an 8 Mbit, 3.0 Volt-only Flash mem-
ory organized as 512 Kbytes of 8 bits each. For flexible
erase and program capability, the 512 Kbits of data is
divided into 19 sectors of one 16 Kbyte, two 8 Kbyte,
one 32 Kbyte, and fifteen 64 Kbytes. The data appears
on DQ0–DQ7. The Am29LV008 is offered in a 40-pin
TSOP package. This device is designed to be pro-
grammed in-system with the standard system 3.0 volt
V
CC
supply. The device can also be reprogrammed in
standard EPROM programmers.
The Am29LV008 provides two levels of performance.
The first level offers access times as fast as 100 ns with
a V
CC
range as low as 2.7 volts, which is optimal for
battery powered applications. The second level offers a
Publication#
20511
Rev:
C
Amendment/+1
Issue Date:
May 1997
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.