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AM29LV008B-100FE 参数 Datasheet PDF下载

AM29LV008B-100FE图片预览
型号: AM29LV008B-100FE
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash Memory,]
分类和应用:
文件页数/大小: 39 页 / 142 K
品牌: CYPRESS [ CYPRESS ]
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P R E L I M I N A R Y  
Data Protection  
Write Pulse “Glitch” Protection  
The Am29LV008 is designed to offer protection against  
accidental erasure or programming caused by spurious  
system level signals that may exist during power transi-  
tions. During power-up, the device automatically resets  
the internal state machine to the read mode. Also, with  
its control register architecture, alteration of the mem-  
ory contents only occurs after successful completion of  
the command sequences.  
Noise pulses of less than 5 ns (typical) on OE, CE, or  
WE will not change the command registers.  
Logical Inhibit  
Writing is inhibited by holding any one of OE = V , CE  
IL  
= V , or WE = V .To initiate a write, CE and WE must  
IH  
IH  
be logical zero while OE is a logical one.  
Power-Up Write Inhibit  
The Am29LV008 incorporates several features to pre-  
Power up of the device with WE = CE = V and OE =  
IL  
vent inadvertent write cycles resulting from V  
CC  
V
will not accept commands on the rising edge of WE.  
IH  
power-up and power-down transitions or system noise.  
The internal state machine is automatically reset to  
read mode on power up.  
Low V Write Inhibit  
CC  
To avoid initiation of a write cycle during V power-up  
CC  
and power-down, a write cycle is locked out for V  
CC  
less than V  
(lock-out voltage). If V  
< V  
, the  
LKO  
CC  
LKO  
command register is disabled and all internal program/  
erase circuits are disabled. Under this condition, the  
device will reset to read mode. Subsequent writes will  
be ignored until the V level is greater than V  
. It is  
CC  
LKO  
the user’s responsibility to ensure that the control levels  
are logically correct when V is above V  
(unless  
CC  
LKO  
the RESET pin is asserted).  
20  
Am29LV008T/Am29LV008B  
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