D A T A S H E E T
REVISION SUMMARY
Revision A (August 1997)
Revision C (January 1998)
Initial release.
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Revision B (October 1997)
Global
AC Characteristics
Added -55 and -60 speed options, deleted -65 speed
option. Changed data sheet designation from Advance
Information to Preliminary.
Changed t and T
to 15 ns for -55 speed option.
FLQZ
DF
Revision C+1 (February 1998)
Connection Diagrams
Table 2, Top Boot Block Sector Address Table
Corrected pinouts on all packages: deleted A18.
Corrected the sector size for SA10 to 16 Kbytes/
8 Kwords.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
DC Characteristics—TTL/NMOS Compatible
Deleted Note 4.
Sector Protection/Unprotection
Revision C+2 (April 1998)
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 µs
after a program command sequence if the sector spec-
ified is protected.
Product Selector Guide, Ordering Information
Added 55 ns 10ꢀ speed option.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
AC Characteristics
Word/Byte Configuration: Changed t
for 55 ns device.
specification
FHQV
Corrected sector erase timeout to 50 µs.
Erase Suspend Command
Erase/Program Operations: Changed t
word
WHWH1
mode specification to 12 µs. Corrected the notes refer-
ence for t and t . These parameters are
Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.
WHWH1
WHWH2
100ꢀ tested. Corrected the note reference for t
This parameter is not 100ꢀ tested.
.
VCS
DC Characteristics
Changed t and t specifications for 55 ns device.
DS
CP
Changed to indicate V min and max values are 11.5
ID
to 12.5 V,with a V test condition of 5.0 V. Revised I
Alternate CE# Controlled Erase/Program Operations:
Changed t word mode specification to 12 µs.
CC
LIT
to 50 µA. Added I
specification. Added typical
CC4
WHWH1
values to TTL/NMOS table. Revised CMOS typical
standby current (I ).
Corrected the notes reference for t
These parameters are 100ꢀ tested.
and t
.
WHWH1
WHWH2
CC3
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Changed t and t specifications for 55 ns device.
DS
CP
Temporary Sector Unprotect Table
Added note reference for t
100ꢀ tested.
. This parameter is not
VIDR
Corrected hexadecimal values in address and data
waveforms.
Erase and Programming Performance
AC Characteristics, Erase/Program Operations
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Corrected t specification for -90 speed option to 45
AH
ns.
Revision C+3 (June 1998)
Erase and Programming Performance
Corrected word and chip programming times.
Distinctive Characteristics
High Performance: Changed “Access times as fast as
55 ns” to “Access times as fast as 45 ns”.
November 11, 2009 21505E8
Am29F400B
39
CYPRESS [ CYPRESS ]
