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AM29F002BB-90EK 参数 Datasheet PDF下载

AM29F002BB-90EK图片预览
型号: AM29F002BB-90EK
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 256KX8, 90ns, PDSO32, LEAD FREE, MO-142BBD, TSOP-32]
分类和应用: 光电二极管内存集成电路
文件页数/大小: 40 页 / 1039 K
品牌: CYPRESS [ CYPRESS ]
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D A T A S H E E T  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the  
device bus operations, which are initiated through the  
internal command register. The command register  
itself does not occupy any addressable memory loca-  
tion. The register is composed of latches that store the  
commands, along with the address and data informa-  
tion needed to execute the command. The contents of  
the register serve as inputs to the internal state  
machine. The state machine outputs dictate the func-  
tion of the device. The appropriate device bus  
operations table lists the inputs and control levels  
required, and the resulting output. The following sub-  
sections describe each of these operations in further  
detail.  
Table 1. Am29F002B/Am29F002NB Device Bus Operations  
RESET#  
Operation  
CE#  
OE# WE#  
(n/a Am29F002NB)  
A0–A17  
DQ0–DQ7  
DOUT  
Read  
Write  
L
L
H
X
X
H
X
H
L
H
H
H
H
H
L
AIN  
AIN  
X
L
DIN  
CMOS Standby  
VCC 0.5 V  
X
X
H
X
High-Z  
High-Z  
High-Z  
High-Z  
TTL Standby  
H
L
X
Output Disable  
X
Reset (n/a on Am29F002NB)  
X
X
Temporary Sector Unprotect  
(See Note)  
X
X
X
VID  
X
X
Legend:  
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 0.ꢀ V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In  
Note: See the sections on Sector Group Protection and Temporary Sector Unprotect for more information. This function requires  
the RESET# pin and is therefore not available on the Am29F002NB dece.  
sectors of memory), the system must drive WE# and  
Requirements for Reading Array Data  
To read array data from the outputs, the system must  
CE# to V , and OE# to V .  
IL  
IH  
drive the CE# and OE# pins to V . CE# is the power  
control and selects the device. OE# is the output  
control and gates array data to the output pins. WE#  
An erase operation can erase one sector, multiple sec-  
tors, or the entire device. The Sector Address Tables  
indicate the address space that each sector occupies.  
A “sector address” consists of the address bits required  
to uniquely select a sector. See the Command Defini-  
tions section for details on erasing a sector or the entire  
chip, or suspending/resuming the erase operation.  
IL  
should remain at V .  
IH  
The internal state machine is set for eading array data  
upon device power-up, or after a hardware reset. This  
ensures that no spurious alteration of the memory  
content occurs during the power transition. No  
command is necessary in this mode to obtain array  
data. Standard microprocessor read cycles that assert  
valid addresses on the device address inputs produce  
valid data on the device data outputs. The device  
remains enabled for read access until the command  
register contents are altered.  
After the system writes the autoselect command  
sequence, the device enters the autoselect mode. The  
system can then read autoselect codes from the  
internal register (which is separate from the memory  
array) on DQ7–DQ0. Standard read cycle timings apply  
in this mode. Refer to the “Autoselect Mode” and  
Autoselect Command Sequence sections for more  
information.  
See “Reading Array Data” for more information. Refer  
to the AC Read Operations table for timing specifica-  
tions and to the Read Operations Timings diagram for  
I
in the DC Characteristics table represents the  
CC2  
active current specification for the write mode. The “AC  
Characteristics” section contains timing specification  
tables and timing diagrams for write operations.  
the timing waveforms. I  
in the DC Characteristics  
CC1  
table represents the active current specification for  
reading array data.  
Program and Erase Operation Status  
During an erase or program operation, the system may  
check the status of the operation by reading the status  
Writing Commands/Command Sequences  
To write a command or command sequence (which  
includes programming data to the device and erasing  
bits on DQ7–DQ0. Standard read cycle timings and I  
CC  
read specifications apply. Refer to “Write Operation  
8
Am29F002B/Am29F002NB  
21527D8 November 17, 2009  
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