SRAM
Austin Semiconductor, Inc.
256K x 1 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-88725
• SMD 5962-88544
• MIL-STD-883
MT5C2561
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A6
A7
A8
A9
A10
A11
A14
A15
A0
Q
WE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A5
A4
A3
A2
A1
A17
A16
A13
A12
D
CE\
FEATURES
High Speed: 35, 45, 55, and 70
Battery Backup: 2V data retention
Low power standby
High-performance, low-power, CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
•
•
•
•
28-Pin LCC (EC)
• Timing
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
A8
A7
A6
Vcc
A17
3 2 1 28 27
26
25
24
23
22
21
20
19
18
13 14 15 16 17
A12
D
CE\
Vss
WE\
OPTIONS
MARKING
-35
-45
-55*
-70*
NC 4
A9 5
A10 6
A11 7
A14 8
A15 9
A0 10
Q 11
NC 12
NC
A4
A3
A2
A1
A17
A16
A13
NC
C
EC
No. 106
No. 204
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS and are fabricated using double-
layer metal, double-layer polysilicon technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) on all organiza-
tions. This enhancement can place the outputs in High-Z for
additional flexibility in system design. The x1 configuration
features separate data input and output.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is accom-
plished when WE\ remains HIGH and CE\ goes LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power re-
quirements.
These devices operate from a single +5V power sup-
ply and all inputs and outputs are fully TTL compatible.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
*Electrical characteristics identical to those provided for the 45ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C2561
Rev. 2.5 1/01
1
CYPRESS [ CYPRESS SEMICONDUCTOR ]
