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5962-8866204NA 参数 Datasheet PDF下载

5962-8866204NA图片预览
型号: 5962-8866204NA
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 32KX8, 45ns, CMOS, CDIP28, 0.300 INCH, CERDIP-28]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 13 页 / 237 K
品牌: CYPRESS [ CYPRESS ]
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CY7C199  
[3, 7]  
Switching Characteristics Over the Operating Range  
7C199-8  
7C199-10  
Min. Max.  
7C199-12  
Min. Max.  
7C199-15  
Min. Max.  
Parameter  
Description  
Min.  
Max.  
Unit  
READ CYCLE  
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time  
8
3
10  
3
12  
3
15  
3
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
RC  
Address to Data Valid  
8
10  
12  
15  
AA  
Data Hold from Address Change  
CE LOW to Data Valid  
OHA  
ACE  
DOE  
LZOE  
HZOE  
LZCE  
HZCE  
PU  
8
10  
5
12  
5
15  
7
OE LOW to Data Valid  
4.5  
[8]  
OE LOW to Low Z  
0
3
0
0
3
0
0
3
0
0
3
0
[8, 9]  
OE HIGH to High Z  
5
4
8
5
5
5
5
7
7
[8]  
CE LOW to Low Z  
[8,9]  
CE HIGH to High Z  
CE LOW to Power-Up  
CE HIGH to Power-Down  
10  
12  
15  
PD  
[10, 11]  
WRITE CYCLE  
t
t
t
t
t
t
t
t
t
t
Write Cycle Time  
8
7
7
0
0
7
5
0
10  
7
12  
9
15  
10  
10  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CE LOW to Write End  
SCE  
AW  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
WE Pulse Width  
7
9
0
0
HA  
0
0
0
SA  
7
8
9
PWE  
SD  
Data Set-Up to Write End  
Data Hold from Write End  
5
8
9
0
0
0
HD  
[9]  
WE LOW to High Z  
5
6
7
7
HZWE  
LZWE  
[8]  
WE HIGH to Low Z  
3
3
3
3
Shaded area contains preliminary information.  
Notes:  
7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,  
input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance.  
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.  
9. tHZOE, tHZCE, and tHZWE are specified with CL = 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.  
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate  
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.  
11. The minimum write cycle time for write cycle #3 (WEcontrolled, OE LOW) is the sum of tHZWE and tSD  
.
5
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