Preliminary
CBC34813 EnerChip™ RTC
CHARGE PUMP CHARACTERISTICS (PERTAINS TO INTEGRATED CBC910 POWER MANAGEMENT CIRCUIT)
(NOTE: THIS TABLE PROVIDES IMPORTANT INFORMATION WHEN CONNECTING ADDITIONAL ENERCHIPS TO VCHG.)
VDD = 2.5V to 5.5V, Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
MIN
MAX
UNITS
ENABLE=VDD to Charge
tCPON
ENABLE to 3rd charge pump
60
80
µs
Pump Active
pulse, VDD=3.3V
ENABLE Falling to
Charge Pump Inactive
tCPOFF
0
1
µs
-
Charge Pump Frequency
fCP
-
120
300
KHz (1)
Ω
Charge Pump
Resistance
RCP
Delta VBAT, for IBAT charging
current of 1µA to 100µA
CFLY=0.1µF, CBAT=1.0µF
150
VCHG Output Voltage
VCP
CFLY=0.1µF, CBAT=1.0µF,
4.075
4.125
V
IOUT=1µA, Temp=+25ºC
VCHG Temp. Coefficient
TCCP
ICP
IOUT=1µA, Temp=+25ºC
-2.0
1.0
-2.4
-
mV/ºC
Charge Pump Current
Drive
IBAT=1mA
CFLY=0.1µF, CBAT=1.0µF
mA
Charge Pump on Voltage
VENABLE
ENABLE=VDD
2.5
-
V
(1) fCP = 1/tCPPER
ADDITIONAL CHARACTERISTICS
Ta = -20ºC to +70ºC
CHARACTERISTIC
SYMBOL
CONDITION
LIMITS
UNITS
MIN
2.75
+1
MAX
3.25
+2
VBAT Cutoff Threshold
Cutoff Temp. Coefficient
VBAT Cutoff Delay Time
VBATCO
TCCO
IOUT=1µA
-
V
mV/ºC
ms
tCOOFF
VBAT from 40mV above to
20mV below VBATCO
IOUT=1µA
40
-
Note:ꢀAllꢀspecificationsꢀcontainedꢀwithinꢀthisꢀdocumentꢀareꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice
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