CT814 Series
AC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
VF
Parameters
Forward voltage
Test Conditions
IF= 10mA
Min
Typ
1.24
30
Max
1.4
-
Units Notes
-
-
V
Input Capacitance
f= 1MHz
pF
CIN
Detector Characteristics
Symbol
BVCEO
BVECO
ICEO
Parameters
Test Conditions
Min
80
6
Typ
Max
Units Notes
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
IC= 100µA
-
-
-
-
-
V
V
IE= 100µA
VCE= 20V, IF=0mA
-
100
nA
Transfer Characteristics
Symbol
Parameters
Test Conditions
Min
20
Typ
Max
300
150
300
1.3
Units Notes
CT814
-
-
-
-
Current Transfer Ratio CT814A
CT814B
IF= 1mA, VCE= 5V
50
%
CTR
100
0.7
CTR Symmetry
IF= 1mA, VCE= 5V
IF= 20mA, IC= 1mA
Collector-Emitter Saturation
Voltage
-
0.04
0.2
V
VCE(SAT)
Isolation Resistance
Isolation Capacitance
VIO= 500VDC
f= 1MHz
5x1010
-
-
-
Ω
RIO
CIO
0.5
1
pF
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
6
Max
Units Notes
Rise Time
Fall Time
-
-
-
-
tr
tf
IC= 2mA, VCE= 2V, RL= 100
µs
8
CT Micro
Proprietary & Confidential
Rev 2
Apr, 2015
Page 3
CTMICRO [ CT Micro International Corporation ]
