CNY17-1, CNY17-2, CNY17-3, CNY17-4
CNY17F-1, CNY17F-2, CNY17F-3, CNY17F-4
DC Input 6-Pin Phototransistor Optocoupler
Electrical Characteristics TA = 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
Parameters
Forward voltage
Test Conditions
IF=10mA
Min
Typ
1.24
-
Max
1.4
5
Units Notes
V
VF
IR
Reverse Current
Input Capacitance
VR = 6V
f= 1MHz
-
-
µA
pF
20
-
CIN
Detector Characteristics
Symbol
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Base
Test Conditions
Min
80
7
Typ
Max
Units
Notes
IC= 0.1mA
IE= 0.1mA
-
-
-
-
V
V
V
BVCEO
BVECO
IC= 0.1mA
80
-
-
BVCBO
Breakdown
CNY17-1/2/3/4
Emitter-Base
V
IE= 0.1mA
7
-
-
-
-
-
BVEBO
ICEO
Breakdown
Collector-Emitter Dark Current
VCE= 10V, IF=0mA
VCB= 10V, IF=0mA
50
20
nA
nA
Collector-Base
CNY17-1/2/3/4
Dark Current
-
ICBO
Transfer Characteristics
Symbol
Parameters
Test Conditions
Min
40
Typ
Max
80
125
200
320
-
Units
Notes
CNY17-1,CNY17F-1
CNY17-2,CNY17F-2
CNY17-3,CNY17F-3
CNY17-4,CNY17F-4
CNY17-1,CNY17F-1
CNY17-2,CNY17F-2
CNY17-3,CNY17F-3
CNY17-4,CNY17F-4
-
-
-
-
-
-
-
-
63
IF= 10mA, VCE= 5V
100
160
13
Current
Transfer
Ratio
%
CTR
22
-
IF= 1mA, VCE= 5V
34
-
56
-
Collector- Emitter Saturation
Voltage
IF= 10mA, IC= 2.5mA
-
-
0.3
V
VCE(SAT)
Isolation Resistance
Isolation Capacitance
VIO= 500VDC
f= 1MHz
1x1011
-
-
-
-
Ω
RIO
CIO
0.25
pF
CT Micro
Proprietary & Confidential
Rev 1
Feb, 2014
Page 3
CTMICRO [ CT Micro International Corporation ]
